Re-examination of the post-transit photocurrents in expanding-thermal-plasma-grown a-Si: H

被引：2

作者：

Brinza, M ^{[1
]}

Adriaenssens, GJ ^{[1
]}

机构：

[1] Univ Leuven, B-3001 Louvain, Belgium

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2003年 / 14卷 / 10-12期

关键词：

D O I：

10.1023/A:1026116112515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The interpretation of post-transit photocurrents in a time-of-flight experiment, in terms of the underlying density of localized gap states in the sample, is questioned for the case of previously examined hydrogenated amorphous silicon cells prepared by the expanding thermal plasma technique. Part of the observed current is not generated by re-emission of trapped photo-generated charge and should, therefore, not be used for density-of-states calculations. (C) 2003 Kluwer Academic Publishers.

引用

页码：749 / 750

页数：2

共 5 条

[1]

Adriaenssens GJ, 2000, J OPTOELECTRON ADV M, V2, P31

[2] TRANSIENT PHOTOCHARGE MEASUREMENTS AND ELECTRON-EMISSION FROM DEEP LEVELS IN UNDOPED A-SI-H [J].