Integrated approach to electrode and AlN depositions for bulk acoustic wave (BAW) devices

被引:44
作者
Jakkaraju, R
Henn, G
Shearer, C
Harris, A
Rimmer, N
Rich, P
机构
[1] Trikon Technol Ltd, Newport NP18 2TA, Shrops, England
[2] EPCOS AG, D-81617 Munich, Germany
关键词
AlN; piezoelectric films; BAW; electrodes;
D O I
10.1016/S0167-9317(03)00386-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper investigates the (002) texture of AlN films deposited by reactive pulsed direct current sputtering on Al, Al-Cu, W and Mo metal electrodes. X-Ray diffraction and atomic force microscopy studies show that the AlN texture is dependent on the deposition conditions and nature of the underlayers. A smooth underlayer with a sharp texture represents the best combination of properties. AlN films with a full width at half maximum less than 1.5 have been deposited on the electrodes studied. It is also possible to deposit well-textured electrodes with a roughness less than 2.5 nm. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:566 / 570
页数:5
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