CMOS-compatible 8 x 2 thermopile array

被引：24

作者：

Li, Yanlong ^{[1
,2
]}

Zhou, Hong ^{[1
]}

Li, Tie ^{[1
]}

Wang, Yi ^{[1
]}

Liu, Yanxiang ^{[1
]}

Wang, Yuelin ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing, Peoples R China

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2010年 / 161卷 / 1-2期

关键词：

Thermopile; Array; Crystal direction; Front-cut; THERMOELECTRIC RADIATION SENSORS; FABRICATION; SENSITIVITY; MODEL;

D O I：

10.1016/j.sna.2010.04.026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A front-cut infrared thermopile array with good CMOS compatibility is demonstrated in this paper. Properly arranged narrow windows in IR absorbing area of the thermopile are designed along the [1 0 0] direction on the (1 0 0) Si wafer. Our experiment shows that this infrared thermopile array has good responsivity of 43 v/w, detectivity of 2.8 x 10(7) cm Hz(1/2)/W, and response time of 9 ms as well as good yield better than 90%. A single element reached 99% yield in a wafer. The responsivity non-uniformity of elements in a 8 x 2 thermopile array does not exceed 3% and it costs only 90 etching min for the element size of 490 mu m x 490 mu m. Based on this thermopile array, an IR imager is developed. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：120 / 126

页数：7

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