Process performance for Axcelis MC3 300 mm implanter

被引：0

作者：

Rathmell, RD ^{[1
]}

Ray, AM ^{[1
]}

Sato, F ^{[1
]}

Godfrey, CJ ^{[1
]}

机构：

[1] Axcelis Technol Inc, Beverly, MA 01915 USA

来源：

2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS | 2000年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The process performance of the Axcelis Technologies MC3, medium current implanter for 300 mm wafers, is reviewed. The MC3 is based on an evolutionary design approach. It uses proven beam transport, electrostatic scanning, beam parallelism, and energy purity schemes based on the successful 8250(HT) design. Metals contamination, beam parallelism, energy purity, particles, and dose uniformity and repeatability will be reviewed. The results show that metals contamination, parallelism, and particle contamination are better than those for the 8250(HT). Energy purity, dose repeatability and uniformity are similar to the ones achieved with 8250(HT).

引用

页码：364 / 367

页数：4