Enhanced ferroelectric properties of V-doped BaBi4Ti4O15 single crystal

Single crystals of barium bismuth titanate (BaBi4Ti4O15) and BaBi4Ti4O15 partially substituted with V5+ and Ba2+ for Ti4+ and Bi3+ sites, respectively, at 5 at. % (Ba1.2Bi3.8Ti3.8V0.2O15), were grown using slow cooling. The incorporation of vanadium into the B-site of the layered pseudo-perovskite block resulted in a shift of the Curie point to a higher temperature, from 410 degreesC to 425 degreesC, and an increase in dielectric permittivity from 8000 to 9500 along the a(b)-axis direction and from 150 to 160 along the c-axis direction at 1 MHz and at their respective Curie points. The increase in Curie temperature brought about an increase in remanent polarization, and saturated remanent polarization was enhanced from 14.8 muC cm(-2) to 15.5 muC cm(-2).