Effect of in situ H2-plasma cleaning on TiSi2 film properties in plasma enhanced chemical vapor deposition

被引：2

作者：

Fouad, OA

Yamazato, M

Ahagon, H

Nagano, M

机构：

[1] Cent Met Res & Dev Inst, Cairo, Egypt

[2] Saga Univ, Fac Sci & Engn, Dept Appl Chem, Saga 8408502, Japan

来源：

MATERIALS LETTERS | 2003年 / 57卷 / 19期

关键词：

silicides; H-2-plasma cleaning; crystal structure; electrical properties; deposition; surfaces;

D O I：

10.1016/S0167-577X(02)01405-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of in situ H-2-plasma cleaning on the properties of TiSi2 film was investigated. At high RF plasma power (350 W), the film surface was rough and had voids due to damage of Si surface. At low RF power (30 W), the film surface was rough due to residual silicon oxide on the Si substrate surface. (C) 2002 Elsevier Science B.V. All rights reserved.

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收藏

页码：2965 / 2969

页数：5

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