Phase change memory materials-composition, structure, and properties

被引：26

作者：

Frumar, M.

Frumarova, B.

Wagner, T.

Hrdlicka, M.

机构：

[1] Univ Pardubice, Res Ctr, Pardubice 53210, Czech Republic

[2] Univ Pardubice, Dept Gen & Inorgan Chem, Pardubice 53210, Czech Republic

[3] Univ Pardubice, Acad Sci Czech Republ, Inst Macromol Chem, Joint Lab Solid State Chem, CZ-53210 Pardubice, Czech Republic

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2007年 / 18卷 / Suppl 1期

关键词：

D O I：

10.1007/s10854-007-9187-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The phase change memory materials (PCMM), their composition, structure, properties and crystallization are discussed. Formation of intermediary phases with high density of substitutional defects during high-speed crystallization of their amorphous forms is suggested.

引用

页码：S169 / S174

页数：6

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