Optical and Structural Properties of a-SiC:H prepared by Hot-wire CVD Technique at Various Gas Flow

被引：0

作者：

Azis, A. ^{[1
]}

Rahman, S. A. ^{[1
]}

机构：

[1] Univ Malaya, Fac Sci, Dept Phys, Kuala Lumpur 50603, Malaysia

来源：

INTERNATIONAL CONFERENCE ON ADVANCEMENT OF MATERIALS AND NANOTECHNOLOGY 2007 | 2010年 / 1217卷

关键词：

Optical; Structural; a-SiC:H; Hot-wire CVD; Gas Flow; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; SILICON; GROWTH; RATES;

D O I：

10.1063/1.3377889

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

a-SiC:H films were prepared using a home-built hot-wire chemical vapor deposition (HW-CVD) system. Silane and methane gases were used as source gases and were allowed to flow into the chamber at different flow rate ratios. The a-SiC:H films were deposited on pre-heated crystal silicon and glass substrates. FTIR spectra shows the existence of Si-C stretching bond for all samples with its intensity is obviously higher for a-SiC:H films prepared at higher methane to silane gas flow rate ratios. The increment of methane to silane gas flow rate ratio has enhanced the formation of Si-C bonds and thus increasing the optical energy gap (E-g) consistently. High methane to silane gas flow rate ratio also resulted in rapid growth of a-SiC:H films. Raman spectra show evidence of amorphous Si (a-Si) structure in all samples. Study shows that the optical and structural properties of a-SiC:H film was highly influenced by different gas flow rate ratio of the source gases.

引用

页码：58 / 64

页数：7

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