Electronic structure of epitaxial Fe-doped SrTiO3 thin films

被引：16

作者：

Szade, J. ^{[1
]}

Szot, K. ^{[1
,2
]}

Kulpa, M. ^{[1
]}

Kubacki, J. ^{[1
]}

Lenser, Ch. ^{[2
]}

Dittmann, R. ^{[2
]}

Waser, R. ^{[2
]}

机构：

[1] Univ Silesia, A Cheikowski Inst Phys, PL-40007 Katowice, Poland

[2] Forschungszentrum Juelich, Inst Solid State Res, D-52425 Julich, Germany

来源：

PHASE TRANSITIONS | 2011年 / 84卷 / 5-6期

关键词：

electronic structure; SrTiO3; resistive switching; XPS; SURFACE; XPS;

D O I：

10.1080/01411594.2010.551806

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

X-ray photoelectron spectroscopy has been applied to study the electronic structure of the epitaxial Fe-doped SrTiO3 thin films with an Fe concentration of 1 and 2 at%. The results were compared to undoped thin films and lightly Fe-doped single crystal of SrTiO3. Fe doping was found to increase the amount of the in-gap states which can be related to the increased ability of Fe-doped thin films to exhibit resistive switching behaviour. Core level analysis indicates the mixed-valence character of Fe atoms in the films, with a divalent contribution situated on the surface.

引用

页码：489 / 500

页数：12

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