Carbon Nanotube Circuits: Opportunities and Challenges

被引:0
作者
Wei, Hai [1 ]
Shulaker, Max [1 ]
Hills, Gage [1 ]
Chen, Hong-Yu [1 ]
Lee, Chi-Shuen [1 ]
Liyanage, Luckshitha [1 ]
Zhang, Jie [1 ]
Wong, H. -S. Philip [1 ]
Mitra, Subhasish [2 ]
机构
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Comp Sci, Stanford, CA 94305 USA
来源
DESIGN, AUTOMATION & TEST IN EUROPE | 2013年
基金
美国国家科学基金会;
关键词
Carbon Nanotube; CNT; CNFET; Nanotechnology; Modeling; Imperfection; Variation; Three-Dimensional Circuits; CHEMICAL-VAPOR-DEPOSITION; ALIGNED ARRAYS; DENSITY; INTEGRATION; IMMUNE;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Carbon Nanotube Field-Effect Transistors (CNFETs) are excellent candidates for building highly energy-efficient digital systems. However, imperfections inherent in carbon nanotubes (CNTs) pose significant hurdles to realizing practical CNFET circuits. In order to achieve CNFET VLSI systems in the presence of these inherent imperfections, careful orchestration of design and processing is required: from device processing and circuit integration, all the way to large-scale system design and optimization. In this paper, we summarize the key ideas that enabled the first experimental demonstration of CNFET arithmetic and storage elements. We also present an overview of a probabilistic framework to analyze the impact of various CNFET circuit design techniques and CNT processing options on system-level energy and delay metrics. We demonstrate how this framework can be used to improve the energy-delay-product (EDP) of CNFET-based digital systems.
引用
收藏
页码:619 / 624
页数:6
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