The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene

被引：234
作者：
Kalbac, Martin [1 ,3 ]
Reina-Cecco, Alfonso [2 ]
Farhat, Hootan [2 ]
Kong, Jing [3 ]
Kavan, Ladislav [1 ]
Dresselhaus, Mildred S. [3 ,4 ]
机构：
[1] Acad Sci Czech Republic, J Heyrovsky Inst Phys Chem, VVI, CZ-18223 Prague 8, Czech Republic
[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[4] MIT, Dept Phys, Cambridge, MA 02139 USA
来源：
ACS NANO | 2010年 / 4卷 / 10期
关键词：
graphene; Raman spectroscopy; doping; electrochemical gating; spectroelectrochemistry; WALLED CARBON NANOTUBES; SCATTERING; GRAPHITE;
D O I：
10.1021/nn1010914
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Electrochemical charging has been applied to study the influence of doping on the intensity of the various Raman features observed in chemical vapor-deposition-grown graphene. Three different laser excitation energies have been used to probe the influence of the excitation energy on the behavior of both the G and G' modes regarding their dependence on doping. The intensities of both the G and G' modes exhibit a significant but different dependence on doping. While the intensity of the G' band monotonically decreases with Increasing magnitude of the electrode potential (positive or negative), for the G band a more complex behavior has been found. The striking feature is an increase of the Raman intensity of the G mode at a high value of the positive electrode potential. Furthermore, the observed increase of the Raman intensity of the G mode is found to be a function of laser excitation energy.
引用
收藏
页码：6055 / 6063
页数：9
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