An asymmetric Si/Si1-xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor

被引：0

作者：

Chen, XD ^{[1
]}

Ouyang, Q ^{[1
]}

Jayanarayanan, SK ^{[1
]}

Prins, FE ^{[1
]}

Banerjee, S ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 02期

关键词：

MOSFET; short channel effects; Si1-xGex; hole mobility;

D O I：

10.1016/S0038-1101(01)00013-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we discuss a vertical p-type metal-oxide-semiconductor held-effect transistor device structure with an asymmetric Si/Si1-xGex deep submicron (100 nm) channel. The source and source end of the channel are made of Si while rest of the channel and the drain are made of strained Si1-xGex. Compared with conventional Si device, the drive current of this asymmetric channel device is improved due to high electric field near the source end, high pinchoff voltage and high hole mobility in the strained Si1-xGex layer. The short channel effects and punchthrough are not degraded because the source and channel junction is made of Si, instead of strained Si1-xGex which has a smaller band gap. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：281 / 285

页数：5

共 14 条

[1] SiGe heterojunction vertical p-type metal-oxide-semiconductor field-effect transistors with Si cap [J].