Characterization of NbTiN thin films prepared by reactive DC-magnetron sputtering

被引：17

作者：

Matsunaga, T ^{[1
]}

Maezawa, H

Noguchi, T

机构：

[1] Grad Univ Adv Studies, Dept Astron Sci, Minamisa Ku, Nagano 3841305, Japan

[2] Natl Astron Observ Japan, Nobeyama Radio Observ, Minamisa Ku, Nagano 3841305, Japan

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2003年 / 13卷 / 02期

关键词：

NbTiN; reactive magnetron sputtering; SIS mixer; thin films;

D O I：

10.1109/TASC.2003.812226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Niobium-titanium-nitride (NbTiN) thin films were prepared on quartz substrates by reactive dc-magnetron sputtering with a NbTi alloy target, and their properties, were studied systematically. Properties of the thin films, such as superconducting transition temperature were strongly dependent on variation of cathode voltage, DeltaU, which is induced when a small fraction of N-2 is added to Ar during sputter discharge. High quality thin films with transition temperature as big h as, 15 K and resistivity of similar to100 muOmegacm have been obtained at around DeltaU = 28 V with a total, gas pressure of 0.9 Pa. Since gap frequency calculated from the measured critical temperature of 15 K based on BCS the theory is about 1.1 THz, these NbTiN thin films are good candidates for wiring layers of SIS mixers as well as SIS junctions in the 1 THz band.

引用

页码：3284 / 3287

页数：4

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