Curvature and bow of bulk GaN substrates

被引：52

作者：

Foronda, Humberto M. ^{[1
]}

Romanov, Alexey E. ^{[1
,2
,3
]}

Young, Erin C. ^{[1
]}

Roberston, Christian A. ^{[1
]}

Beltz, Glenn E. ^{[4
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] RAS, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] ITMO Univ, St Petersburg 197101, Russia

[4] Univ Calif Santa Barbara, Dept Mech Engn, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 120卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

INCLINED THREADING DISLOCATIONS; GALLIUM NITRIDE; STRESS-RELAXATION; MISMATCHED LAYERS; GROWTH; CRYSTAL; REDUCTION; DEFECTS; STRAIN;

D O I：

10.1063/1.4959073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the bow of free standing (0001) oriented hydride vapor phase epitaxy grown GaN substrates and demonstrate that their curvature is consistent with a compressive to tensile stress gradient (bottom to top) present in the substrates. The origin of the stress gradient and the curvature is attributed to the correlated inclination of edge threading dislocation (TD) lines away from the [0001] direction. A model is proposed and a relation is derived for bulk GaN substrate curvature dependence on the inclination angle and the density of TDs. The model is used to analyze the curvature for commercially available GaN substrates as determined by high resolution x-ray diffraction. The results show a close correlation between the experimentally determined parameters and those predicted from theoretical model. (C) 2016 Author(s).

引用

页数：7

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