INVESTIGATION ON RANDOM CHARGING/DISCHARGING OF SINGLE OXIDE TRAP IN SiO2: AN AB -INITIO STUDY

被引:0
作者
Ji, Jingwei [1 ]
Wang, Runsheng [1 ]
Qiu, Yingxin [1 ]
Huang, Ru [1 ]
机构
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, an improved simulation methodology for ab-initio calculation on random charging/discharging of gate oxide trap is proposed and adopted for investigation on oxygen vacancy defect in SiO2 gate dielectric. Issues of unexpected high thermal barriers and oversimplified energy-position relationship of defect in conventional simulation are addressed and solved by the new method. The new methodology provides an effective platform for the studies on charging/discharging of various defects in different gate dielectrics, thus is helpful for the understanding of RTN and NBTI reliability.
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页数:3
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