Oxygen incorporation into GST phase-change memory matrix

Structural changes in amorphous and crystallized GST-225 films induced by the reaction with oxygen are studied at different depth scales. The mechanism of interaction of the very top surface layers with oxygen is studied with low-energy ion scattering (LEIS) technique, while the modifications of chemistry in the underlying surface layers are investigated with high-resolution X-ray photoelectron spectroscopy (XPS). The changes averaged through the overall film thickness are characterized by micro-Raman spectroscopy. The oxygen exposure leads to a depletion of GST-225 film surfaces in Te and formation of the antimony and germanium oxides. The antimony oxide complexes are found throughout the whole thickness of the films after their prolonged storage in air, whereas no evidence for formation of pure GeO2 phase is found in the volume of the films through Raman spectroscopy. A tendency to form Ge-rich phase within the similar to 10 nm surface layer is additionally observed by LEIS profiling during crystallization of GST-225 film at 300 degrees C in oxygen atmosphere. (C) 2015 Elsevier B.V. All rights reserved.