High-G Shock Reliability of 3-D Integrated Structure Microsystem Based on Finite Element Simulation

被引：4

作者：

Long, Yangtao ^{[1
]}

Di, Ziye ^{[1
]}

Lu, Chenhao ^{[1
]}

Tian, Wenya ^{[1
]}

Dou, Long ^{[1
]}

Jin, Zhong ^{[1
]}

Xiao, Jinqing ^{[1
]}

Li, Junhui ^{[1
]}

机构：

[1] Cent South Univ, State Key Lab High Performance Complex Mfg, Sch Mech & Elect Engn, Changsha 410083, Peoples R China

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2021年 / 11卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Strain; Electric shock; Stress; Loading; Through-silicon vias; Substrates; Reliability; 3-D integrated structure microsystem (3-D-ISM); shock reliability; filler; loading type; failure; finite element method (FEM); DROP IMPACT RELIABILITY; SOLDER JOINT;

D O I：

10.1109/TCPMT.2021.3094594

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to understand high-G shock reliability of the 3-D integrated structure microsystem (3-D-ISM), it is studied by the finite element method (FEM). First, a numerical model of the 3-D-ISM is established for simulation. Then, appropriate elements are used to discretize the geometry, and certain initial and boundary conditions are enforced. Acceleration up to 20000 G is applied to the high-G shock simulation process. The simulation results showed that the filler can significantly improve the high-G shock reliability of the 3-D-ISM. And by filling with the filler, the 3-D-ISM under different loading types and different substrates can meet the strength requirement after being subjected to the high-G shock. This study could provide reliability prediction for the designed 3-D-ISM.

引用

页码：1243 / 1249

页数：7

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