High-Speed Fabry-Perot Optical Modulator in Silicon With 3-μm Diode

被引：9

作者：

Meister, S. ^{[1
]}

Rhee, H. ^{[1
]}

Al-Saadi, A. ^{[1
]}

Franke, B. A. ^{[1
]}

Kupijai, S. ^{[1
]}

Theiss, C. ^{[1
]}

Eichler, H. J. ^{[1
]}

Stolarek, D. ^{[2
]}

Richter, H. H. ^{[2
]}

Zimmermann, L. ^{[2
]}

Tillack, B. ^{[2
]}

Lesny, M. ^{[1
]}

Meuer, C. ^{[3
]}

Schubert, C. ^{[1
]}

Woggon, U. ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Opt & Atomare Phys, D-10623 Berlin, Germany

[2] IHP Microelect, D-15236 Frankfurt, Order, Germany

[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2015年 / 33卷 / 04期

关键词：

Integrated optics; optoelectronic devices; optical modulation; silicon photonics;

D O I：

10.1109/JLT.2015.2390077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon optical modulator using a novel node-matched-diode geometry inside a Fabry-Perot nanowaveguide resonator is presented. The diode length is only 3 mu m. An analysis of the dynamic spectral transmission behavior is given. Non-return-to-zero data transmission of 10 Gb/s is demonstrated.

引用

页码：878 / 881

页数：4

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