Host isotope effects on midinfrared optical transitions in silicon

被引:20
作者
Davies, G [1 ]
Hayama, S
Hao, S
Nielsen, BB
Coutinho, J
Sanati, M
Estreicher, SK
Itoh, KM
机构
[1] Kings Coll London, Dept Phys, London WC2R 2LS, England
[2] Univ Aarhus, Inst Phys & Astron, DK-8000 Aarhus, Denmark
[3] Univ Aveiro, Dept Phys, P-3810 Aveiro, Portugal
[4] Texas Tech Univ, Dept Phys, Lubbock, TX 79401 USA
[5] Keio Univ, Dept Appl Phys & Physicoinformat, Yokohama, Kanagawa 2238522, Japan
关键词
D O I
10.1103/PhysRevB.71.115212
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of changing the host-lattice isotopes from natural silicon (approximately Si-28) to Si-30 are reported for some of the important local vibrational modes (LVMs) observed in as-grown and electron-irradiated Czochralski silicon. We show that the quanta of the LVMs shift to lower energy in Si-30 compared to natural silicon by amounts varying from 3.5 to 27 cm(-1), in very good agreement with predictions from density functional theory. The 2767 cm(-1) ("3.6 mu m") transition of the negative divacancy is also found to shift to lower energy with increasing silicon mass, but we demonstrate, using an empirical method of predicting the shifts of zero-phonon lines, that the line is a zero-phonon line. The empirical method used is verified by analyzing the shifts of the very-low energy 3942 cm(-1) vibronic band.
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页数:7
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共 38 条
[1]  
ASTM (American Society for Testing and Materials), 1992, ANN BOOK ASTM STAND, P189
[2]  
Bean A. R., 1970, Solid State Communications, V8, P175, DOI 10.1016/0038-1098(70)90074-8
[3]   DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].
CORBETT, JW ;
WATKINS, GD ;
CHRENKO, RM ;
MCDONALD, RS .
PHYSICAL REVIEW, 1961, 121 (04) :1015-&
[4]   Interstitial carbon-oxygen center and hydrogen related shallow thermal donors in Si -: art. no. 014109 [J].
Coutinho, J ;
Jones, R ;
Briddon, PR ;
Öberg, S ;
Murin, LL ;
Markevich, VP ;
Lindström, JL .
PHYSICAL REVIEW B, 2002, 65 (01) :1-11
[5]   CARBON-RELATED RADIATION-DAMAGE CENTERS IN CZOCHRALSKI SILICON [J].
DAVIES, G ;
OATES, AS ;
NEWMAN, RC ;
WOOLLEY, R ;
LIGHTOWLERS, EC ;
BINNS, MJ ;
WILKES, JG .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (06) :841-855
[6]   Optical properties of a silver-related defect in silicon [J].
Davies, G ;
Gregorkiewicz, T ;
Iqbal, MZ ;
Kleverman, M ;
Lightowlers, EC ;
Vinh, NQ ;
Zhu, MX .
PHYSICAL REVIEW B, 2003, 67 (23)
[7]   A MODEL FOR RADIATION-DAMAGE EFFECTS IN CARBON-DOPED CRYSTALLINE SILICON [J].
DAVIES, G ;
LIGHTOWLERS, EC ;
NEWMAN, RC ;
OATES, AS .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (08) :524-532
[8]   THE 3942-CM-1 OPTICAL BAND IN IRRADIATED SILICON [J].
DAVIES, G ;
LIGHTOWLERS, EC ;
STAVOLA, M ;
BERGMAN, K ;
SVENSSON, B .
PHYSICAL REVIEW B, 1987, 35 (06) :2755-2766
[9]  
Davies G, 1994, Handbook on semiconductors, V3b, P1557, DOI DOI 10.1002/CVDE.19960020108
[10]   ABINITIO CALCULATION OF PHONON DISPERSIONS IN SEMICONDUCTORS [J].
GIANNOZZI, P ;
DE GIRONCOLI, S ;
PAVONE, P ;
BARONI, S .
PHYSICAL REVIEW B, 1991, 43 (09) :7231-7242