A monolithic voltage-boosting parallel-primary transformer structures for fully integrated CMOS power amplifier design

被引:24
作者
An, Kyu Hwan [1 ]
Kim, Younsuk [2 ]
Lee, Ockgoo [1 ]
Yang, Ki Seok [1 ]
Kim, Hyungwook [1 ]
Woo, Wangmyong [2 ]
Chang, Jae Joon [2 ]
Lee, Chang-Ho [2 ]
Kim, Haksun [2 ]
Laskar, Joy [1 ]
机构
[1] Georgia Inst Technol, Georgia Elect Design Ctr, Atlanta, GA 30308 USA
[2] Samsung RFIC Design Ctr, Atlanta, GA 30308 USA
来源
2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2007年
关键词
voltage-boosting; parallel-primary; transformer; CMOS; power amplifier;
D O I
10.1109/RFIC.2007.380914
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a novel monolithic voltage-boosting parallel-primary transformer is presented for the fully integrated CMOS power amplifier design. Multiple primary loops are interweaved in parallel to combine the AC currents from multiple power devices while the higher turn ratio of a secondary loop boosts AC voltages of the combined primary loops at the load of the secondary loop. The proposed interweaved structure is much more compact and separable from power devices, avoiding potential instability. To verify the feasibility of this power combining method, the fully integrated CMOS switching power amplifier was implemented in a standard 0.18-mu m technology. The power amplifier successfully demonstrated a measured output power of 1.3 W and a measured power added efficiency (PAE) of 41% to a 50-92 load with a 3.3-V power supply at 1.8 GHz operation.
引用
收藏
页码:419 / +
页数:2
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