A Scalable, CMOS-Compatible Assembly of Ambipolar Semiconducting Single-Walled Carbon Nanotube Devices

被引：32

作者：

Ganzhorn, Marc ^{[1
,7
]}

Vijayaraghavan, Aravind ^{[1
,2
]}

Green, Alexander A. ^{[4
,5
]}

Dehm, Simone ^{[1
]}

Voigt, Achim ^{[6
]}

Rapp, Michael ^{[6
]}

Hersam, Mark C. ^{[4
,5
]}

Krupke, Ralph ^{[1
,3
]}

机构：

[1] Karlsruhe Inst Technol, Inst Nanotechnol, D-76021 Karlsruhe, Germany

[2] Univ Manchester, Sch Comp Sci, Manchester M13 9PL, Lancs, England

[3] Karlsruhe Inst Technol, DFG Ctr Funct Nanostruct CFN, D-76028 Karlsruhe, Germany

[4] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[5] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[6] Karlsruhe Inst Technol, Inst Mikrostrukturtech, D-76021 Karlsruhe, Germany

[7] UJF Grenoble, CNRS, Inst Neel, F-38042 Grenoble, France

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 15期

基金：

加拿大自然科学与工程研究理事会; 美国国家科学基金会;

关键词：

ELECTRONIC-STRUCTURE; GROWTH; SEPARATION; NANOTECHNOLOGY; CONDUCTION; DISPERSION;

D O I：

10.1002/adma.201004640

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Semiconducting single-walled carbon nanotubes are integrated into high-density arrays using dielectrophoresis, which is a CMOS-compatible, bottom-up assembly technique. The devices are statistically analyzed by voltage-contrast scanning electron microscopy and electron transport measurements. Annealing and the choice of parylene substrate are shown to improve device performance.

引用

页码：1734 / +

页数：6

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