Submicron metal-semiconductor-metal diamond photodiodes toward improving the responsivity

被引：16
作者：
Liao, Meiyong
Alvarez, Jose
Imura, Masataka
Koide, Yasuo
机构：
[1] NIMS, ICYS, Tsukuba, Ibaraki 3050044, Japan
[2] Univ Paris 06, Ecole Super Elect, Lab Genie Elect Paris, CNRS,UMR 8507, F-91192 Gif Sur Yvette, France
[3] NIMS, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan
[4] Univ Paris 11, Ecole Super Elect, Lab Genie Elect Paris, CNRS,UMR 8507, F-91192 Gif Sur Yvette, France
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 16期
关键词：
D O I：
10.1063/1.2800801
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metal-semiconductor-metal deep-ultraviolet detectors with electrode spacings from 0.14 to 10 mu m have been fabricated on a homoepitaxial diamond thin film grown on a Ib-type diamond substrate. A dramatic increase of the deep ultraviolet responsivity is observed when the electrode spacing is scaled down. The reduction in the electrode spacing enables the full depletion of the spacing at low biases, providing a higher responsivity without sacrification of the response speed. (C) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 20 条
[1]   Large deep-ultraviolet photocurrent in metal-semiconductor-metal structures fabricated on as-grown boron-doped diamond [J].
Alvarez, J ;
Liao, MY ;
Koide, Y .
APPLIED PHYSICS LETTERS, 2005, 87 (11)
[2]   Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition [J].
Balducci, A ;
Marinelli, M ;
Milani, E ;
Morgada, ME ;
Tucciarone, A ;
Verona-Rinati, G ;
Angelone, M ;
Pillon, M .
APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3
[3]  
Bergonzo P, 2004, SEMICONDUCT SEMIMET, V77, P197
[4]   Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration [J].
De Sio, A ;
Achard, J ;
Tallaire, A ;
Sussmann, RS ;
Collins, AT ;
Silva, F ;
Pace, E .
APPLIED PHYSICS LETTERS, 2005, 86 (21) :1-3
[5]   Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation [J].
Duboz, JY ;
Reverchon, JL ;
Adam, D ;
Damilano, B ;
Grandjean, N ;
Semond, F ;
Massies, J .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) :5602-5604
[6]   Trapping mechanism on oxygen-terminated diamond surfaces [J].
Itoh, Yutaka ;
Sumikawa, Yu ;
Umezawa, Hitoshi ;
Kawarada, Hiroshi .
APPLIED PHYSICS LETTERS, 2006, 89 (20)
[7]   SIMULATIONS FOR THE TRANSIENT-RESPONSE OF GRADED ALXGA1-XN SUBMICRON PHOTODETECTORS [J].
JOSHI, RP .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (07) :4434-4436
[8]   Very fast metal-semiconductor-metal ultraviolet photodetectors on GaN with submicron finger width [J].
Li, JL ;
Donaldson, WR ;
Hsiang, TY .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (08) :1141-1143
[9]   Single Schottky-barrier photodiode with interdigitated-finger geometry: Application to diamond [J].
Liao, Meiyong ;
Koide, Yasuo ;
Alvarez, Jose .
APPLIED PHYSICS LETTERS, 2007, 90 (12)
[10]   High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film [J].
Liao, Meiyong ;
Koide, Yasuo .
APPLIED PHYSICS LETTERS, 2006, 89 (11)
12