Growth of nitrogen-doped ZnSe by photoassisted metalorganic chemical vapor deposition

被引：5
|
作者：
Fujita, Y
Terada, T
Fujii, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 7B期
关键词：
ZnSe; p-type conduction; nitrogen doping; hydrogen passivation; tertiary butylamine; photoassisted MOCVD; secondary ion mass spectrometry; Hall measurement;
D O I：
10.1143/JJAP.35.L923
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Growth of nitrogen-doped ZnSe using dimethylzinc and dimethylselenide in the growth temperature range of 330 to 390 degrees C by photoassisted metalorganic chemical vapor deposition (MOCVD) employing an ultrahigh-pressure Hg lamp was investigated. t-Butylamine was used as a nitrogen dopant source. A nitrogen concentration of more than 10(18) cm(-3) was obtained. The samples showed p-type conduction, and a maximum hole concentration of 3.0 x 10(18) cm(-3) was achieved by MOCVD.
引用
收藏
页码：L923 / L925
页数：3
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