A novel implantless MOS thin-film transistor with simple processing, excellent performance and ambipolar operation capability

被引：14

作者：

Lin, HC ^{[1
]}

Lin, CY ^{[1
]}

Yeh, KL ^{[1
]}

Huang, RG ^{[1
]}

Wang, MF ^{[1
]}

Yu, CM ^{[1
]}

Huang, TY ^{[1
]}

机构：

[1] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel thin film transistor (TFT) capable of ambipolar operation is demonstrated. The field induced source drain region supplies abundant channel carriers during on-state. On the other hand, the region reduces off-state leakage. The suggested device structure and fabrication is advantageous in making the overall process simple and suitable for low temperature manufacturing. The ambipolar mode with superior characteristic is demonstrated.

引用

页码：857 / 859

页数：3

共 7 条

[1] DEVICE SENSITIVITY OF FIELD-PLATED POLYSILICON HIGH-VOLTAGE TFTS AND THEIR APPLICATION TO LOW-VOLTAGE OPERATION [J].