Observation of Continuous and Non-continuous Laser Induced Periodic Structures on Silicon

被引:4
|
作者
Satapathy, Pravakar [1 ]
Panda, Rudrashish [1 ]
Sahoo, Rajashree [1 ]
Shukla, Mukesh Kumar [2 ]
Khatua, Lizina [3 ]
Sahoo, Pratap Kumar [2 ]
Das, Ritwick [2 ]
Das, Susanta Kumar [1 ]
机构
[1] KIIT, Sch Appl Sci, Dept Phys, Bhubaneswar 751024, Odisha, India
[2] HBNI, Sch Phys Sci, NISER, Bhubaneswar 752050, Odisha, India
[3] KIIT Univ, Sch Elect Engn, Bhubaneswar 751024, Odisha, India
来源
JOURNAL OF LASER MICRO NANOENGINEERING | 2018年 / 13卷 / 03期
关键词
Nanosecond laser; laser induced black Si; Laser induced periodic structure; Mechanism of ripple formation; Large area laser structuring; SURFACE-STRUCTURES; IRRADIATION; ABLATION;
D O I
10.2961/jlmn.2018.03.0001
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work we have demonstrated the formation of continuous and non-continuous laser-induced periodic structures on silicon substrate (SiLIPS) using nanosecond (ns) laser. The continuous SiLIPS were generated in air by linearly polarized similar to 2 ns laser pulses. The optimized fluence, repetition rate and scanning velocity for generation of such structures are 0.4 J/cm(2), 40 kHz and 0.5 minis respectively. The period of the SiLIPS (900 nm) was found to be close to the laser wavelength and the orientation was perpendicular to the polarization of the laser beam. Further, in this work we have also shown the appearance of non-continuous SiLIPS in localized region. Based on this observation, discussion is given on the mechanism of SiLIPS formation.
引用
收藏
页码:146 / 149
页数:4
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