Identification technique of FET model based on vector nonlinear measurements

被引：12

作者：

Avolio, G. ^{[1
]}

Schreurs, D. ^{[1
]}

Raffo, A. ^{[2
]}

Crupi, G. ^{[3
]}

Angelov, I. ^{[4
]}

Vannini, G. ^{[2
]}

Nauwelaers, B. ^{[1
]}

机构：

[1] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-3001 Louvain, Belgium

[2] Univ Ferrara, Dept Engn, I-44122 Ferrara, Italy

[3] Univ Messina, Dipartimento Fis Mat & Ingn Elettron, I-98166 Messina, Italy

[4] Chalmers, SE-41296 Gothenburg, Sweden

来源：

ELECTRONICS LETTERS | 2011年 / 47卷 / 24期

关键词：

LARGE-SIGNAL MEASUREMENTS; EXTRACTION;

D O I：

10.1049/el.2011.2892

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new modelling approach which exploits only vector nonlinear measurements is described. The parameters of the I-V and Q-V nonlinear constitutive functions are identified by combining low-and high-frequency large-signal measurements with a numerical optimisation routine. Low-frequency dispersion manifesting in the I-V characteristics is also correctly accounted for. As a case study a gallium nitride HEMT on silicon carbide substrate is considered and very good agreement between measurements and simulation is achieved.

引用

页码：1323 / U37

页数：2

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