Electronic properties and interlayer coupling in magnetic semiconductor heterostructures

被引：0
|
作者：
Wilczynski, M [1 ]
Swirkowicz, R [1 ]
机构：
[1] Warsaw Univ Technol, Inst Phys, PL-00662 Warsaw, Poland
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1999年 / 212卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-3951(199903)212:1<165::AID-PSSB165>3.0.CO;2-T
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Heterostructures composed of magnetic and nonmagnetic semiconductor layers are investigated within the framework of the tight-binding model. The band structure and local densities of states (DOS) are calculated. Spin-dependent modifications are found in DOS of nonmagnetic layers for thin spacers. A coupling between magnetic moments across a nonmagnetic spacer is discussed.
引用
收藏
页码：165 / 173
页数：9
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