Room temperature ferromagnetism in ZnO films due to defects

被引：321

作者：

Xu, Qingyu ^{[1
]}

Schmidt, Heidemarie ^{[1
]}

Zhou, Shengqiang ^{[1
]}

Potzger, Kay ^{[1
]}

Helm, Manfred

Hochmuth, Holger ^{[2
]}

Lorenz, Michael ^{[2
]}

Setzer, Annette ^{[2
]}

Esquinazi, Pablo ^{[2
]}

Meinecke, Christoph ^{[2
]}

Grundmann, Marius ^{[2
]}

机构：

[1] Forschungszentrum Dresden Rossendorf eV, Inst Ionenstrahlphys & Matforsch, D-01328 Dresden, Germany

[2] Univ Leipzig, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 08期

关键词：

D O I：

10.1063/1.2885730

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO films were prepared by pulsed laser deposition on a-plane sapphire substrates under N-2 atmosphere. Ferromagnetic loops were obtained with the superconducting quantum interference device at room temperature, which indicate a Curie temperature much above room temperature. No clear ferromagnetism was observed in intentionally Cu-doped ZnO films. This excludes that Cu doping into ZnO plays a key role in tuning the ferromagnetism in ZnO. 8.8% negative magnetoresistance probed at 5 K at 60 kOe on ferromagnetic ZnO proves the lack of s-d exchange interaction. Anomalous Hall effect (AHE) was observed in ferromagnetic ZnO as well as in nonferromagnetic Cu-doped ZnO films, indicating that AHE does not uniquely prove ferromagnetism. The observed ferromagnetism in ZnO is attributed to intrinsic defects. (c) 2008 American Institute of Physics.

引用

页数：3

共 21 条

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