Serial and Parallel Si, Ge, and SiGe Direct-Write with Scanning Probes and Conducting Stamps

被引：17

作者：

Vasko, Stephanie E. ^{[1
,2
]}

Kapetanovic, Adnan ^{[1
]}

Talla, Vamsi ^{[1
,3
]}

Brasino, Michael D. ^{[1
]}

Zhu, Zihua ^{[4
]}

Scholl, Andreas ^{[5
]}

Torrey, Jessica D. ^{[1
]}

Rolandi, Marco ^{[1
]}

机构：

[1] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

[2] Univ Washington, Dept Chem, Seattle, WA 98195 USA

[3] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA

[4] Pacific NW Natl Lab Sci, Richland, WA 99352 USA

[5] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 06期

基金：

美国国家科学基金会;

关键词：

Silicon nanostructure; germanium nanostructure; SiGe; heterostructures; nanopatterning; LITHOGRAPHY; GROWTH; SEMICONDUCTOR; OXIDATION; FEATURES; RESIST; LAYERS;

D O I：

10.1021/nl200742x

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Precise materials integration in nanostructures is fundamental for future electronic and photonic devices. We demonstrate Si, Ge, and SiGe nanostructure direct-write with deterministic size, geometry, and placement control. The biased probe of an atomic force microscope (AFM) reacts diphenylsilane or diphenylgermane to direct-write carbon-free Si, Ge, and SiGe nano and heterostructures. Parallel direct-write is available on large areas by substituting the AFM probe with conducting microstructured stamps. This facile strategy can be easily expanded to a broad variety of semiconductor materials through precursor selection.

引用

页码：2386 / 2389

页数：4

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