A 1.8-GHz 2-Watt fully integrated CMOS push-pull parallel-combined power amplifier design

被引：10

作者：

Lee, Ockgoo ^{[1
]}

Yang, Ki Seok ^{[1
]}

An, Kyu Hwan ^{[1
]}

Kim, Younsuk ^{[2
]}

Kim, Hyungwook ^{[1
]}

Chang, Jae Joon ^{[2
]}

Woo, Wangmyong ^{[2
]}

Lee, Chang-Ho ^{[2
]}

Laskar, Joy ^{[1
]}

机构：

[1] Georgia Inst Technol, Atlanta, GA 30332 USA

[2] Samsung RFIC Design Ctr, Atlanta, GA 30308 USA

来源：

2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2007年

关键词：

CMOS PA; class-E; transformer; impedance transformation; parallel-combining; power amplifier;

D O I：

10.1109/RFIC.2007.380918

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper newly presents a push-pull parallel-combined CMOS power amplifier (PA) and its analysis of operation. The proposed class-E CMOS PA incorporates the push-pull parallel-combined power devices with the 1:1:2 (two single-turn primary windings and a two-turn secondary winding) step-up on-chip transformer. The PA is fully integrated in a standard 0.18-mu m CMOS technology without any external balun or matching networks. The operation of the PA with a multi-turn on-chip transformer is substantially analyzed in order to optimize the device size and its structure. Experimental data demonstrates the output power of 2-Watt and the power-added efficiency (PAE) of more than 30% with a 3.3-V of power supply at 1.8 GHz. This is the new demonstration of the compact fully integrated CMOS PA with 2-Watt of output power with very stable operation at 1.8GHz range.

引用

页码：435 / +

页数：2

共 9 条

[1] Fully integrated CMOS power amplifier design using the distributed active-transformer architecture [J].