Through-silicon-via (TSV) filling by electrodeposition with pulse-reverse current

被引：24

作者：

Jin, Sanghyun ^{[1
]}

Seo, Sungho ^{[2
]}

Park, Sangwo ^{[1
]}

Yoo, Bongyoung ^{[1
,2
]}

机构：

[1] Hanyang Univ, Dept Mat Engn, Ansan, South Korea

[2] Hanyang Univ, Dept Bionanotechnol, Ansan, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2016年 / 156卷

关键词：

TSV; Cu; Electrodeposition; Pulse-reverse current; SUPPRESSOR; CU; TECHNOLOGY;

D O I：

10.1016/j.mee.2016.02.020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The through-Si-via (TSV) interconnection provides the ideal 3D interconnection in a next generation semiconductor device which has significantly innovated function, excellent performance and high efficiency. In this study, TSV fillings by electrodeposition of Cu with various current forms were carried out to improve the via filling rate. Especially, the influence of reverse current density, and average current density on the TSV filling property was studied. similar to 7% of improvement in via filling, rate compared with using direct current (DC) was achieved by applying the pulse-reverse current form, which was mainly caused by effective adsorption and redistribution of additives inside via. (C) 2016 Elsevier B.V. All rights reserved.

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收藏

页码：15 / 18

页数：4

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