Modeling and Characterization of Slow-Wave Microstrip Lines on Metallic-Nanowire-Filled-Membrane Substrate

被引：35

作者：

Serrano, Ariana L. C. ^{[1
]}

Franc, Anne-Laure ^{[2
,3
,4
,5
,6
]}

Assis, D. P. ^{[1
]}

Podevin, Florence ^{[7
,8
]}

Rehder, Gustavo P. ^{[1
]}

Corrao, Nicolas ^{[7
,8
]}

Ferrari, Philippe ^{[7
,8
]}

机构：

[1] Univ Sao Paulo, Lab Microelect LME, BR-05508900 Sao Paulo, Brazil

[2] Univ Toulouse, F-31071 Toulouse, France

[3] UPS, INPT, F-31071 Toulouse, France

[4] LAPLACE, F-31071 Toulouse, France

[5] ENSEEIHT, F-31071 Toulouse, France

[6] CNRS, F-31071 Toulouse, France

[7] Univ Grenobles Alpes, IMEP LAHC, F-380010 Grenoble, France

[8] CNRS, IMEP LAHC, F-38000 Grenoble, France

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2014年 / 62卷 / 12期

基金：

巴西圣保罗研究基金会;

关键词：

Low-cost substrate; microstrip devices; millimeter-wave (mmW) propagation; nanowires; slow-wave (SW) structures; MICROWAVE;

D O I：

10.1109/TMTT.2014.2366108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a physical model of the slow-wave (SW) microstrip lines based on a metallic-nanowire-filled-membrane substrate is presented for the first time. The model properly predicts the behavior of the SW transmission lines as shown by the experimental results. Two sets of transmission lines differing in oxide thickness with various widths were fabricated and characterized up to 70 GHz. The electrical model is valid for both oxide thicknesses and microstrips width. High-quality factors are obtained, above 40 from 30 GHz up to 70 GHz, paving the way for further designs of passive circuits, like power dividers or hybrid couplers, with good performance.

引用

页码：3249 / 3254

页数：6