Sputter-deposited Ga-Sn-Zn-O thin films for transparent thin film transistors

被引：4

作者：

Kim, Dong-Ho ^{[1
]}

Kim, Hey-Ri ^{[1
]}

Kwon, Jung-Dae ^{[1
]}

Lee, Gun-Hwan ^{[1
]}

Lee, Hee Sung ^{[2
]}

Im, Seongil ^{[2
]}

机构：

[1] Korea Inst Mat Sci, Funct Coatings Res Grp, Chang Won 641831, South Korea

[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 12期

关键词：

oxide semiconductors; thin film transistors; ZnO; AMORPHOUS OXIDE SEMICONDUCTORS;

D O I：

10.1002/pssa.201127213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaSnZnO (GTZO) thin films were prepared on glass substrates at 100 degrees C by co-sputtering of Ga-doped ZnO and SnO2 targets. Characteristic properties of the films were investigated with varying oxygen gas content in the sputtering ambient. Whereas amorphous GTZO films were prepared with pure Ar sputtering, polycrystalline films were obtained with the addition of oxygen gas. With a proper mixing ratio of sputtering gases, O2/(Ar+O2) similar to 2%, we could obtain GTZO films with good performances as an active channel material in thin film transistor (TFT); i.e, field effect mobility of 12.2cm2V-1s-1, on/off current ratio of 109, and subthreshold voltage swing of 0.46Vdecade-1.

引用

页码：2934 / 2938

页数：5

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