Compensation technique for DC and transient instability of thin film transistor circuits for large-area devices

被引：3

作者：

Chaji, G. Reza ^{[1
]}

Safavian, Nader ^{[1
]}

Nathan, Arokia ^{[2
,3
]}

机构：

[1] Univ Waterloo, Elect & Comp Dept, Waterloo, ON N2L 3G1, Canada

[2] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

[3] Ignis Innovat Inc, Waterloo, ON, Canada

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2008年 / 56卷 / 1-2期

基金：

加拿大自然科学与工程研究理事会;

关键词：

amorphous silicon; threshold voltage shift; sensor array; AMOLED display;

D O I：

10.1007/s10470-007-9082-4

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A reliable driving scheme that can compensate for the inherent instability of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) is essential for implementation of large-area devices including displays and sensor arrays for bio-imaging applications. In particular, for high precision and high-resolution devices, the technique should be accurate and fast. A new driving scheme is presented that enables control of the DC and transient shift in the threshold voltage (V-T) and gate voltage of drive/amplifier TFT, while fulfilling the timing requirements for the different applications. The transient shift in the gate voltage has been known to contribute as much as 10% error in controlling the DC shift in the VT whereas it is less than 0.5% for the driving scheme presented here.

引用

页码：143 / 151

页数：9

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