Time-resolved-spectrum studies of GaN light emitting diodes

被引：25
作者：
Choa, FS
Fan, JY
Liu, PL
Sipior, J
Rao, G
Carter, GM
Chen, YJ
机构：
[1] Dept. of Comp. Sci. and Elec. Eng., Univ. of Maryland Baltimore County, Baltimore
[2] Naval Research Laboratory, Washington
[3] Dept. of Elec. and Comp. Engineering, SUNY at Buffalo, Amherst
[4] Medical Biotechnology Center, Maryland Biotechnology Institute, University of Maryland at Baltimore, Baltimore
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 24期
关键词：
D O I：
10.1063/1.117183
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Time-resolved-emission spectra of InGaN and GaN light emitting diodes with different device structure are studied. Result shows that the UV generation from bulk materials and blue and green emissions from single quantum well devices are band edge recombination. (C) 1996 American Institute of Physics.
引用
收藏
页码：3668 / 3670
页数：3
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