A review on the joining of SiC for high-temperature applications
被引:66
作者:
Yoon, Dang-Hyok
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Yeungnam Univ, Sch Mat Sci & Engn, Gyongsan 38541, South KoreaYeungnam Univ, Sch Mat Sci & Engn, Gyongsan 38541, South Korea
Yoon, Dang-Hyok
[1
]
Reimanis, Ivar E.
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Colorado Sch Mines, Colorado Ctr Adv Ceram, Met & Mat Engn Dept, Golden, CO 80401 USAYeungnam Univ, Sch Mat Sci & Engn, Gyongsan 38541, South Korea
Reimanis, Ivar E.
[2
]
机构:
[1] Yeungnam Univ, Sch Mat Sci & Engn, Gyongsan 38541, South Korea
[2] Colorado Sch Mines, Colorado Ctr Adv Ceram, Met & Mat Engn Dept, Golden, CO 80401 USA
A review on the joining of SiC is given in response to the interest surge on this material for a number of applications. Because the engineering design for the majority of applications requires complicated shapes, there has been a strong demand for the development of reliable joining techniques for SiC, especially for high-temperature applications. However, the joining of SiC-based materials is inherently difficult because of the high degree of covalent bonding in SiC and the low self-diffusivity. This review discusses basic mechanisms and properties of the SiC joining techniques developed to date; they are divided into eight different categories. In addition, critical assessment is given for each technique in the context of high-temperature application (>= 1000 degrees C). Finally, comments are provided for the use of these techniques in advanced nuclear reactors where stringent irradiation stability under neutron irradiation as well as hermeticity and joint strength are required.