Design-Oriented All-Regime All-Region 7-Parameter Short-Channel MOSFET Model Based on Inversion Charge

This paper presents a 7-parameter analytical model of the MOS transistor based on the inversion charge targeted at the development of simplified analytical circuit design methodologies that take into account the physics of the MOS transistor. The proposed design-oriented model allows for the first time to describe both the main short-channel effects of advanced nanometric technologies and the dependence of the transistor drain current on the drain voltage, while the model remains valid for all bias regimes (from weak to strong inversion) and for all operating regions (linear and saturated). A simple procedure based on the device physics is proposed to estimate the transistor model parameters for a given technology. Furthermore, analytical expressions of the current derivatives are developed targeting different design scenarios. The accuracy of the proposed model is validated by direct comparison to silicon measurements of N-MOS transistors in 28 nm FD-SOI technology for channel width of 1 mu m and channel lengths of 30 nm, 60 nm and 150 nm, and also to simulations performed with an industry-standard compact model.