共 50 条
- [23] Temperature-dependent electrical properties of Au Schottky contact and deep level defects in n-type GaN OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2008, 2 (07): : 410 - 414
- [24] Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium Journal of Applied Physics, 2008, 104 (02):
- [25] Deep-level defects in n-type 6H silicon carbide induced by He implantation Ling, C.C. (ccling@hku.hk), 1600, American Institute of Physics Inc. (98):
- [26] INVESTIGATION OF THERMAL DEFECTS IN HIGH-RESISTIVITY N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (09): : 1051 - 1052
- [28] Optimized Design of Ni/GaN Schottky Barrier IMPATT Diode With n-type GaN Deep Level Defects PROCEEDINGS OF THE 2021 CROSS STRAIT RADIO SCIENCE AND WIRELESS TECHNOLOGY CONFERENCE (CSRSWTC), 2021, : 52 - 54
- [30] INVESTIGATION OF ANNEALING OF NEUTRON-IRRADIATED N-TYPE SILICON BY THE DEEP LEVEL TRANSIENT SPECTROSCOPY METHOD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (06): : 729 - 730