Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon

被引：16

作者：

Vaqueiro-Contreras, M. ^{[1
]}

Markevich, V. P. ^{[1
]}

Halsall, M. P. ^{[1
]}

Peaker, A. R. ^{[1
]}

Santos, P. ^{[2
,3
]}

Coutinho, J. ^{[2
,3
]}

Oberg, S. ^{[4
]}

Murin, L. I. ^{[5
]}

Falster, R. ^{[6
]}

Binns, J. ^{[7
]}

Monakhov, E. V. ^{[8
]}

Svensson, B. G. ^{[8
]}

机构：

[1] Univ Manchester, Photon Sci Inst, Manchester M13 9PL, Lancs, England

[2] Univ Aveiro, Dept Phys, Campus Santiago, P-3810193 Aveiro, Portugal

[3] Univ Aveiro, I3N, Campus Santiago, P-3810193 Aveiro, Portugal

[4] Lulea Univ Technol, Dept Engn Sci & Math, SE-97187 Lulea, Sweden

[5] NAS Belarus, Mat Res Ctr, Minsk 220072, BELARUS

[6] SunEdison Semicond Ltd, Viale Gherzi 31, I-28100 Novara, Italy

[7] SunEdison Inc, 7832 N Leadbetter Rd, Portland, OR 97203 USA

[8] Univ Oslo, Dept Phys, SMN, N-0316 Oslo, Norway

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2017年 / 11卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

carbon-oxygen defects; Czochralski silicon; hydrogen; minority carrier transient spectroscopy; recombination centers; ANNEALING BEHAVIOR; COMPLEXES; PASSIVATION;

D O I：

10.1002/pssr.201700133

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It has been acknowledged for over 50 years that treatments with hydrogen can improve silicon semiconductor devices. In recent years, these have been used to an advantage in silicon solar cells reducing the loss of photo-generated carriers at the silicon surface or at the silicon interface with dielectrics. However, we have found that in some types of silicon the in-diffusion of hydrogen can result in the formation of powerful recombination centers composed of carbon, oxygen, and hydrogen which reduce the carrier lifetime and ultimately the efficiency of solar cells made from such material.

引用

页数：6

共 29 条

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