Characterization of Ni/Au GaN schottky contact base on I-V-T and C-V-T measurements

被引：6

作者：

Liu Jie ^{[1
]}

Hao Yue ^{[1
]}

Feng Qian ^{[1
]}

Wang Chong ^{[1
]}

Zhang Jin-Cheng ^{[1
]}

Guo Liang-Liang ^{[1
]}

机构：

[1] Xidian Univ, Inst Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

ACTA PHYSICA SINICA | 2007年 / 56卷 / 06期

关键词：

GaN; schottky diode; thin surface barrier model; thermion field emission;

D O I：

10.7498/aps.56.3483

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on the temperature-dependent current-voltage (I-V-T) measurements and the temperature-dependent capacitance-voltage (C-V-T) measurements of Schottky diodes fabricated on n-type GaN, the mechanism of the electrical current transport was discussed using thin surface barrier (TSB) model. The experiment results indicated that there are different mechanisms at different temperatures and bias. Based on this assumption we give a modified I-V characteristic formula which gives excellent fit to the experiment data. The SBHs determined from high-temperature I-V curves, low-temperature C-V curves, and the metal work function agree well each other.

引用

页码：3483 / 3487

页数：5

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