Layer-by-layer crystallization of Co2FeSi Heusler alloy thin films

被引：8

作者：

Fleet, L. R. ^{[1
]}

Cheglakov, G. ^{[2
]}

Yoshida, K. ^{[3
]}

Lazarov, V. K. ^{[1
]}

Nakayama, T. ^{[4
]}

Hirohata, A. ^{[2
,5
]}

机构：

[1] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England

[2] Univ York, Dept Elect, York YO10 5DD, N Yorkshire, England

[3] Univ York, York JEOL Nanoctr, York YO10 5DD, N Yorkshire, England

[4] Nagaoka Univ Technol, Nagaoka, Niigata 9402188, Japan

[5] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2012年 / 45卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

INJECTION; ELECTRONS;

D O I：

10.1088/0022-3727/45/3/032001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Grain-size evolution with increasing annealing time has been investigated in polycrystalline Co2FeSi films. The samples were prepared by sputtering giving differing grain sizes. Large grains were formed after annealing at 500 degrees C, with grains over 200 nm forming in the L2(1) phase in a layer-by-layer mode. Further annealing causes a decrease in the average grain size, agreeing well with previously reported results for Co2MnSi. Magnetic measurements showed moments with values of up to 75% of those predicted from the Slater-Pauling curve providing further evidence for the formation of the L2(1) phase.

引用

页数：4

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