Behaviour of surface states on a GaAs/AlGaAs heterostructure investigated by capacitance spectroscopy

被引：3
|
作者：
Ali, K
Skuras, E
Vallis, S
Long, AR
Larkin, IA
Davies, JH
Holland, MC
Mongy, AAE
机构：
[1] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[3] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland
[4] Helwan Univ, Fac Sci, Cairo, Egypt
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1999年 / 25卷 / 1-2期
基金：
英国工程与自然科学研究理事会;
关键词：
surface states; GaAs/AlGaAs heterostructure; lateral surface superlattice; capacitance-voltage measurements;
D O I：
10.1006/spmi.1998.0649
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Low temperature depletion capacitance-voltage data, taken from a novel open design of surface superlattice fabricated on a GaAs/AlGaAs heterostructure, are compared with two theoretical models. These assume either that the Fermi level on the free semiconductor surface is pinned, or that the surface charge state is unaltered (frozen) when the superlattices are biased. The data are in much better agreement with the frozen surface model. (C) 1999 Academic Press.
引用
收藏
页码：285 / 288
页数：4
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