A terahertz quantum cascade. laser grown by low-pressure metalorganic vapor phase epitaxy

被引:13
|
作者
Sirigu, Lorenzo [1 ]
Rudra, Alok [2 ]
Kapon, Eli [2 ]
Amanti, Maria I. [3 ]
Scalari, Giacomo [3 ]
Faist, Jerome [3 ]
机构
[1] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland
[2] Ecole Polytech Fed Lausanne, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland
[3] ETH, Inst Quantum Elect, CH-8096 Zurich, Switzerland
关键词
D O I
10.1063/1.2924294
中图分类号
O59 [应用物理学];
学科分类号
摘要
Demonstration of a terahertz quantum cascade laser grown by a low-pressure metalorganic vapor phase epitaxy is reported. The structural analysis of the grown structure shows a very high degree of vertical uniformity and sharp interfaces. Lasing emission at lambda=90 mu m up to 93 K with a threshold current density J(th)=330 A/cm(2) at 7 K was obtained in a structure incorporating a single plasmon waveguide. (C) 2008 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 50 条
  • [31] Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy
    Onuma, T
    Chichibu, SF
    Sota, T
    Asai, K
    Sumiya, S
    Shibata, T
    Tanaka, M
    APPLIED PHYSICS LETTERS, 2002, 81 (04) : 652 - 654
  • [32] High-performance distributed feedback quantum cascade lasers grown by metalorganic vapor phase epitaxy
    Green, RP
    Wilson, LR
    Zibik, EA
    Revin, DG
    Cockburn, JW
    Pflügl, C
    Schrenk, W
    Strasser, G
    Krysa, AB
    Roberts, JS
    Tey, CM
    Cullis, AG
    APPLIED PHYSICS LETTERS, 2004, 85 (23) : 5529 - 5531
  • [33] STRAINED MULTIPLE QUANTUM-WELL LASERS EMITTING AT 1.3 MU-M GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
    COBLENTZ, D
    TANBUNEK, T
    LOGAN, RA
    SERGENT, AM
    CHU, SNG
    DAVISSON, PS
    APPLIED PHYSICS LETTERS, 1991, 59 (04) : 405 - 407
  • [34] Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy
    Kenji Uchida
    Masahiko Kawata
    Tao Yang
    Shigeo Goto
    Tomoyoshi Mishima
    Atsuko Niwa
    Jun Gotoh
    Journal of Electronic Materials, 1999, 28 : 246 - 251
  • [35] Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy
    Uchida, K
    Kawata, M
    Yang, T
    Goto, S
    Mishima, T
    Niwa, A
    Gotoh, J
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (03) : 246 - 251
  • [36] Low-threshold continuous-wave operation of quantum-cascade lasers grown by metalorganic vapor phase epitaxy
    Troccoli, M
    Bour, D
    Corzine, S
    Höfler, G
    Tandon, A
    Mars, D
    Smith, DJ
    Diehl, L
    Capasso, F
    APPLIED PHYSICS LETTERS, 2004, 85 (24) : 5842 - 5844
  • [37] HIGH-QUALITY INGAASP/INP SINGLE-QUANTUM WELLS AND SUPERLATTICE STRUCTURES GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
    KONDO, M
    YAMAZAKI, S
    SUGAWARA, M
    OKUDA, H
    KATO, K
    NAKAJIMA, K
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 376 - 381
  • [38] STRUCTURAL AND OPTICAL-PROPERTIES OF GAALINAS LATTICE MATCHED TO INP GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
    DAVIES, JI
    MARSHALL, AC
    SCOTT, MD
    GRIFFITHS, RJM
    APPLIED PHYSICS LETTERS, 1988, 53 (04) : 276 - 278
  • [39] COMPOSITION PROFILE OF AN ALGAAS EPILAYER ON A V-GROOVED SUBSTRATE GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY
    PAN, WG
    YAGUCHI, H
    ONABE, K
    ITO, R
    SHIRAKI, Y
    APPLIED PHYSICS LETTERS, 1995, 67 (07) : 959 - 961
  • [40] Indium nitride quantum dots grown by metalorganic vapor phase epitaxy
    Briot, O
    Maleyre, B
    Ruffenach, S
    APPLIED PHYSICS LETTERS, 2003, 83 (14) : 2919 - 2921