Growth and morphology of one-dimensional SiC nanostructures without catalyst assistant

被引：79

作者：

Wei, J ^{[1
]}

Li, KZ ^{[1
]}

Li, HJ ^{[1
]}

Fu, QG ^{[1
]}

Zhang, L ^{[1
]}

机构：

[1] Northwestern Polytech Univ, CC Composities Technol Res Ctr, Xian 710072, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2006年 / 95卷 / 01期

关键词：

carbides; nanostructures; chemical vapor deposition (CVD); crystal growth;

D O I：

10.1016/j.matchemphys.2005.05.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide (SiC) nanowires and a new kind of SiC nanostructure, necklace-like nanowires, had been synthesized by using SiO2 and graphite powder as the raw materials, during which the course of a simple chemical vapor deposition (CVD) technique without any catalyst was applied. The products were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The as-received SiC nanowires have diameters in the range of 50-100 nm and lengths up to several tens of micrometers. The growth of these one-dimensional nanostructures is considered to involve a vapor-solid process and the possible growth mechanism of SiC nanowires is proposed. It is thought that the necklace-like SiC nanowires is formed by a two-step process. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：140 / 144

页数：5

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