Influence of pre-existing and generated traps on reliability in HfSiON/SiO2 stacks with fluorine incorporation

被引：0
|
作者：
Hirano, Izumi [1 ]
Yamaguchi, Takeshi [1 ]
Nakasaki, Yasushi [1 ]
Sekine, Katsuyuki [1 ]
Mitani, Yuichiro [1 ]
机构：
[1] Toshiba Co Ltd, Semicond Co, Adv LSI Technol Lab, Corp R&D Ctr,Isogo Ku, Yokohama, Kanagawa 2358522, Japan
来源：
2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL | 2008年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：659 / 660
页数：2
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