Explanation of stress-induced damage in thin oxides

被引：133

作者：

Bude, JD ^{[1
]}

Weir, BE ^{[1
]}

Silverman, PJ ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a physically-based model for anode hole injection which explains both the voltage polarity asymmetry and sub-threshold behavior of Fowler-Nordheim (FN) stress generated oxide damage down to low VG. Also, we have developed an n-well bias technique for PFETs which clearly establishes that this FN stress-induced damage is due to anode hole injection.

引用

页码：179 / 182

页数：4

共 10 条

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