Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator

被引：4

作者：

Liao, Min ^{[1
]}

Ishiwara, Hiroshi ^{[1
,2
]}

Ohmi, Shun-ichiro ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Elect & Appl Phys, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Konkuk Univ, Dept Phys, Div Quantum Phases & Devices, Seoul 143701, South Korea

来源：

IEICE ELECTRONICS EXPRESS | 2011年 / 8卷 / 18期

关键词：

pentacene; OFETs; HfON; grain size; electrical properties; THIN-FILM TRANSISTORS; LOW-VOLTAGE;

D O I：

10.1587/elex.8.1461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pentacene based organic field-effect transistors (OFETs) with SiO2 and HfON gate insulators have been fabricated, and the effect of deposition temperature and deposition rate on the grain sizes of pentacene films was investigated. It was found that the grain sizes of pentacene films increase with increasing deposition temperature and decreasing deposition rate. Due to the increase in grain size, pentacene based OFET with HfON gate insulator shows enhanced electrical properties, such as a low subthreshold swing of 0.14 V/decade and a large on/off current ratio of 1.1 x 10(4). Moreover, the hole mobility of pentacene based OFET with HfON gate insulator is 0.39 cm(2)/Vs at an operating voltage of -2V.

引用

页码：1461 / 1466

页数：6

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