Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe2/ReSe2 van der Waals Heterostructure

被引:74
作者
Ahn, Jongtae [1 ,2 ]
Ko, Kyul [1 ,3 ,4 ]
Kyhm, Ji-Hoon [5 ]
Ra, Hyun-Soo [1 ]
Bae, Heesun [2 ]
Hong, Sungjae [2 ]
Kim, Dae-Yeon [1 ]
Jang, Jisu [1 ,6 ]
Kim, Tae Wook [1 ]
Choi, Sungwon [1 ]
Kang, Ji-Hoon [7 ]
Kwon, Namhee [8 ]
Park, Soohyung [8 ]
Ju, Byeong-Kwon [3 ]
Poon, Ting-Chung [9 ]
Park, Min-Chul [1 ,6 ]
Im, Seongil [2 ]
Hwang, Do Kyung [1 ,6 ]
机构
[1] Korea Inst Sci & Technol KIST, Postsilicon Semicond Inst, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea
[2] Yonsei Univ, Van Waals Mat Res Ctr, Inst Phys & Appl Phys, Seoul 03722, South Korea
[3] Korea Univ, Coll Engn, Display & Nanosyst Lab, Seoul 02841, South Korea
[4] Korea Inst Sci & Technol KIST, Technol Support Ctr, Res Resources Div, Seoul 02792, South Korea
[5] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 04620, South Korea
[6] Univ Sci & Technol UST, KIST Sch, Div Nano & Informat Technol, Seoul 02792, South Korea
[7] MIT, Res Lab Elect, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[8] Korea Inst Sci & Technol KIST, Adv Anal Ctr, Seoul 02792, South Korea
[9] Virginia Tech, Bradley Dept Elect & Comp Engn, Blacksburg, VA 24061 USA
基金
新加坡国家研究基金会;
关键词
2D ReSe2; 2D WSe2; heterostructure; linear polarization detection; digital incoherent holography; ATOMICALLY THIN; 2D; EXCITONS; PHOTOLUMINESCENCE; SINGLE;
D O I
10.1021/acsnano.1c06234
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III-V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a self-powered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe2/ReSe2 van der Waals heterostructure. The WSe2/ReSe2 heterojunction photodiode with semivertical geometry exhibits excellent performance: an ideality factor of 1.67, a broad spectral photoresponse of 405-980 nm with a significant photovoltaic effect, outstanding linearity with a linear dynamic range wider than 100 dB, and rapid photoswitching behavior with a cutoff frequency up to 100 kHz. Strongly polarized excitonic transitions around the band edge in ReSe2 lead to significant 980 nm NIR linear-polarization-dependent photocurrent. This linear polarization sensitivity remains stable even after exposure to air for longer than five months. Furthermore, by leveraging the NIR (980 nm)-selective linear polarization detection of this photodiode under photovoltaic operation, we demonstrate digital incoherent holographic 3D imaging.
引用
收藏
页码:17917 / 17925
页数:9
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