Optical properties and electronic subband structures in InxGa1-xN/GaN multiple quantum wells

被引：5

作者：

Lee, D. U. ^{[1
]}

Ryu, J. T. ^{[1
]}

You, J. H. ^{[1
]}

Kim, T. W. ^{[1
]}

Jeon, M. H. ^{[2
,3
]}

Yoo, K. H. ^{[2
,3
]}

Cho, C. Y. ^{[4
]}

Park, S. J. ^{[4
]}

机构：

[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea

[2] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

[3] Kyung Hee Univ, Inst Basic Sci, Seoul 130701, South Korea

[4] GIST, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 15期

关键词：

Polarization effect; Electronic structure; InxGa1-xN/GaN multiple quantum well; LIGHT-EMITTING-DIODES; PIEZOELECTRIC POLARIZATION; GAN; ALGAN/GAN; SURFACE; MOVPE;

D O I：

10.1016/j.tsf.2011.01.158

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In Ga1-xN/GaN multiple quantum wells (MQWs) were grown on sapphire substrates by using metalorganic chemical vapor deposition. The optical and electrical properties of the MQWs were investigated photoluminescence (PL) and Hall measurements, respectively. The electronic subband energies, the wave functions, and the Fermi energy in the In0.1Ga0.9N/GaN MQWs were calculated by using a multi-band (k) over right arrow . (p) over right arrow theory and considering the strain due to the lattice mismatch and the spontaneous and piezoelectric polarizations. The potential due to free carriers observed in the Hall measurement was also taken into account in solving the Schnidinger equation and the Poisson equation self-consistently. The calculated interband transition energy was compared with the PL data. The calculated electronic structure of the In0.1Ga0.9N/GaN MQWs showed that only one subband below the Fermi level was occupied by the electrons. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：5122 / 5125

页数：4

共 25 条

[21] Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition [J].

Suihkonen, S. ;

Lang, T. ;

Svensk, O. ;

Sormunen, J. ;

Torma, P. T. ;

Sopanen, M. ;

Lipsanen, H. ;

Odnoblyudov, M. A. ;

Bougrov, V. E. .

JOURNAL OF CRYSTAL GROWTH, 2007, 300 (02) :324-329

[22] Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect [J].

Takeuchi, T ;

Wetzel, C ;

Yamaguchi, S ;

Sakai, H ;

Amano, H ;

Akasaki, I ;

Kaneko, Y ;

Nakagawa, S ;

Yamaoka, Y ;

Yamada, N .

APPLIED PHYSICS LETTERS, 1998, 73 (12) :1691-1693

[23] Band parameters for nitrogen-containing semiconductors [J].

Vurgaftman, I ;

Meyer, JR .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) :3675-3696

[24] Piezoelectric effect on optical properties of pseudomorphically strained wurtzite GaN quantum wells [J].

Wang, J ;

Jeon, JB ;

Sirenko, YM ;

Kim, KW .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (06) :728-730

[25] Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well [J].

Yeh, Dong-Ming ;

Chen, Cheng-Yen ;

Lu, Yen-Cheng ;

Huang, Chi-Feng ;

Yang, C. C. .

NANOTECHNOLOGY, 2007, 18 (26)

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