Photonic crystal defect cavities coupled to N-V centres in diamond
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作者:
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机构:
Marseglia, Luca
[1
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Harrison, J. P.
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机构:
Univ Bristol, Bristol, Avon, EnglandUniv Bristol, Bristol, Avon, England
Harrison, J. P.
[1
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Hadden, J. P.
[1
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Young, A.
[1
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Jelezko, F.
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机构:
Univ Stuttgart, Stuttgart, GermanyUniv Bristol, Bristol, Avon, England
Jelezko, F.
[2
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Naydenov, B.
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Univ Stuttgart, Stuttgart, GermanyUniv Bristol, Bristol, Avon, England
Naydenov, B.
[2
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Meijer, J.
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机构:
Ruhr Univ Bochum, Bochum, GermanyUniv Bristol, Bristol, Avon, England
Meijer, J.
[3
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Stanley-Clarke, A. C.
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机构:
Univ Bristol, Bristol, Avon, EnglandUniv Bristol, Bristol, Avon, England
Stanley-Clarke, A. C.
[1
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Ho, Y. -L. D.
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机构:
Univ Bristol, Bristol, Avon, EnglandUniv Bristol, Bristol, Avon, England
Ho, Y. -L. D.
[1
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O'Brien, J. L.
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Univ Bristol, Bristol, Avon, EnglandUniv Bristol, Bristol, Avon, England
O'Brien, J. L.
[1
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Rarity, J. G.
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机构:
Univ Bristol, Bristol, Avon, EnglandUniv Bristol, Bristol, Avon, England
Rarity, J. G.
[1
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机构:
[1] Univ Bristol, Bristol, Avon, England
[2] Univ Stuttgart, Stuttgart, Germany
[3] Ruhr Univ Bochum, Bochum, Germany
来源:
2010 36TH EUROPEAN CONFERENCE AND EXHIBITION ON OPTICAL COMMUNICATION (ECOC), VOLS 1 AND 2
|
2010年
关键词:
Single photon emitters;
N-V centre;
Q-Factor;
Photonic Crystal Cavity;
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We use focused ion beam (FIB) etching to create suspended photonic crystal cavities in diamond. Our goal is to enhance and control the spontaneous emission of single N-V colour centres, which act like single 'two-level atoms' emitting single photons. The single nitrogen-vacancy (N-V) colour centre in diamond has attracted a lot of interest because it can be optically addressed, is photostable at room temperature and has a paramagnetic ground state whose spin can be initialized and read-out optically. By enclosing the (N-V) colour centre in a resonant cavity we aim to develop rapid readout of this optically addressable single spin. We show a technique using FIB and confocal microscopy to locate single N-V centres and discuss progress towards etching cavities around single centres.